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150N3LLH6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power.

General Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1.

Internal schematic diagram $4!"OR ' Table 1.

Key Features

  • Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6 VDSS 30 V 30 V 30 V RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω ID 80 A 80 A 80 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

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