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15NM60ND Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND N-channel 600 V - 0.

General Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.

3 1 D2PAK 3 2 1 TO-220 3 2 1 TO-247 123 I²PAK 3 2 1 TO-220FP Figure 1.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND 650 V 0.299 Ω 14 A 14 A 14 A(1) 14 A 14 A 1. Limited only by maximum temperature allowed.
  • The worldwide best RDS(on).
  • area amongst the fast recovery diode devices.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities.

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