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15NM60ND - N-channel Power MOSFET

General Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND 650 V 0.299 Ω 14 A 14 A 14 A(1) 14 A 14 A 1. Limited only by maximum temperature allowed.
  • The worldwide best RDS(on).
  • area amongst the fast recovery diode devices.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND 650 V 0.299 Ω 14 A 14 A 14 A(1) 14 A 14 A 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology.