16N90K5 Datasheet | STMicroelectronics

STB16N90K5 N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code RDS(on) max. STB16N90K5 900 V 330 mΩ 15 A - Industry’s lowest RDS(on) x area - Industry’s best FoM (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high...