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180N10F3 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using STripFET F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Key Features

  • Order code VDS STH180N10F3-2 100 V.
  • Ultra low on-resistence.
  • 100% avalanche tested RDS(on) max. 4.5 mΩ ID 180 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TAB 23 1 H2PAK-2 D(TAB) G(1) STH180N10F3-2 Datasheet N‑channel 100 V, 3.9 mΩ typ., 180 A STripFET F3 Power MOSFET in H²PAK‑2 package Features Order code VDS STH180N10F3-2 100 V • Ultra low on-resistence • 100% avalanche tested RDS(on) max. 4.5 mΩ ID 180 A Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2,3) NCHG1DTABS23 Product status link STH180N10F3-2 Product summary Order code STH180N10F3-2 Marking 180N10F3 Package H2PAK-2 Packing Tape and reel DS7317 - Rev 3 - March 2022 For further information contact your local STMicroelectronics sales office. www.st.