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18NF30 - N-CHANNEL POWER MOSFET

General Description

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  • TAB 3 1 D²PAK Figure 1. Internal schematic diagram ' RU7$% .
  •  6  Order code STB18NF30 VDSS 330 V RDS(on) max. 180 mΩ ID 18 A.
  • Designed for automotive.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB18NF30 Automotive-grade N-channel 330 V, 160 mΩ typ., 18 A STripFET™ II Power MOSFET in a D²PAK package Datasheet - production data Features TAB 3 1 D²PAK Figure 1. Internal schematic diagram ' RU7$% *  6  Order code STB18NF30 VDSS 330 V RDS(on) max. 180 mΩ ID 18 A • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • 175 °C junction temperature Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.