Datasheet4U Logo Datasheet4U.com

18NM60N - N-channel Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes VDSS (@Tjmax) RDS(on) max. ID PTOT STB18NM60N STF18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance TAB 3 1 D²PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP 3 2 1 TO-247.

📥 Download Datasheet

Datasheet preview – 18NM60N

Datasheet Details

Part number 18NM60N
Manufacturer STMicroelectronics
File Size 1.15 MB
Description N-channel Power MOSFET
Datasheet download datasheet 18NM60N Datasheet
Additional preview pages of the 18NM60N datasheet.

📁 Similar Datasheet

  • 18NM60 - N-CHANNEL POWER MOSFET (UTC)
  • 18NM65 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 18NM50-U2 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 18NM70 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 18NM80-Q - 800V N-CHANNEL MOSFET (UTC)
  • 18N10 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • 18N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • 18N120BN - HGTG18N120BN (Fairchild Semiconductor)
  • 18N20 - N-CHANNEL POWER MOSFET (UTC)
  • 18N20 - N-Channel Mosfet Transistor (Inchange Semiconductor)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data Features Order codes VDSS (@Tjmax) RDS(on) max. ID PTOT STB18NM60N STF18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance TAB 3 1 D²PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP 3 2 1 TO-247 Applications ■ Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
Published: |