STMicroelectronics 1GW3B2AN6
This is preliminary information on a new product now in development or undergoing evaluation.| Part No. | 1GW3B2AN6 |
|---|---|
| Datasheet | 1GW3B2AN6 Download |
| Manufacturer |  STMicroelectronics |
| Description | NAND Flash Memory |
| Buy | Stock & Price |
FEATURES
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● HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V PAGE SIZE – x8 device: (2048 + 64 spare) Bytes – x16 device: (1024 + 32 spare) Words BLOCK SIZE – x8 device: (128K + 4K spare) Bytes – x16 device: (64K + 2K spare) Words PAGE READ / PROGRAM – Random access: 25µs (max) – Sequential access: 50ns (min) – Page program time: 300µs (typ) COPY BACK PROGRAM MODE – Fast page copy without external buffering CACHE PROGRAM AND CACHE READ MODES – Internal Cache Register to improve the program and read throughputs FAST BLOCK ERASE – Block erase time: 2ms (typ) STATUS REGISTER ELECTRONIC SIGNATURE CHIP ENABLE ‘DON’T CARE’ – for simple interface with microcontroller AUTOMATIC PAGE 0 READ AT POWER-UP – Boot from NAND support SERIAL NUMBER OPTION Figure 1.
