1N5711 Overview
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Unit 70 V 0.41 V 1 0.2 µA DYNAMIC CHARACTERISTICS Symbol Test Conditions C Tamb = 25°C τ Tamb = 25°C VR = 0V IF = 5mA f = 1MHz Krakauer Method Min.



