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1N5711 Datasheet Small Signal Schottky Diode

Manufacturer: STMicroelectronics

Overview: ® 1N5711 SMALL SIGNAL SCHOTTKY DIODE.

General Description

Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.

Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.

Matched batches are available on request ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive Peak Reverse Voltage IF Forward Continuous Current* Ta = 25°C Ptot Power Dissipation* Ta = 25°C Tstg Storage and Junction Temperature Range Tj TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case DO-35 Value Unit 70 V 15 mA 430 mW - 65 to 200 °C - 65 to 200 230 °C THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* Test Conditions Value 400 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR Tamb = 25°C VF * * Tamb = 25°C Tamb = 25°C IR * * Tamb = 25°C Test Conditions IR = 10µA IF = 1mA IF = 15mA VR = 50V Min.

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