STMicroelectronics 1N5711
This publication supersedes and replaces all information previously supplied.| Part No. | 1N5711 |
|---|---|
| Datasheet | 1N5711 Download |
| Manufacturer |  STMicroelectronics |
| Description | SMALL SIGNAL SCHOTTKY DIODE |
| Buy | Stock & Price |
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive Peak Reverse Voltage IF Forward Continuous Current* Ta = 25°C Ptot Power Dissipation* Ta = 25°C Tstg Storage and Junction Temperature Range Tj TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case DO-35 Value Unit 70 V 15 mA 430 mW - 65 to 200 °C - 65 to 200 230 °C THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* Test Conditions Value 400 Unit °C/WELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Symbol VBR Tamb = 25°C VF * * Tamb = 25°C Tamb = 25°C IR * * Tamb = 25°C Test Conditions IR = 10µA IF = 1mA IF = 15mA VR = 50V Min. Typ. Max. Unit 70 V 0.41 V 1 0.2 µA DYNAMIC CHARACTERISTICS Symbol Test Conditions C Tamb = 25°C τ Tamb = 25°C VR = 0V IF = 5mA f = 1MHz Krakauer Method Min.
