This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge.
Key Features
Order code STN1NF20
VDSS 200 V
RDS(on) max < 1.5 Ω.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
1NF20. For precise diagrams, and layout, please refer to the original PDF.
STN1NF20 N-channel 200 V, 1.1 Ω, 1 A SOT-223 STripFET™ II Power MOSFET Features Order code STN1NF20 VDSS 200 V RDS(on) max < 1.5 Ω ■ 100% avalanche tested ■ Low gate char...
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VDSS 200 V RDS(on) max < 1.5 Ω ■ 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability ID 1A Applications ■ Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram $ ' Table 1.
1NF20 Datasheet
