Datasheet Summary
STB20N90K5
N-channel 900 V, 0.21 Ω typ., 20 A MDmesh™ K5 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
STB20N90K5
900 V
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
RDS(on ) max. 0.25 Ω
ID 20 A
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high...