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20NM65N - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • 1 2 3 I 2PAKFP (TO-281) Order code VDSS @Tjmax STFI20NM65N 710 V RDS(on) max. 0.270 Ω ID 15 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STFI20NM65N N-channel 650 V, 15 A, 0.250 Ω typ., MDmesh™ II Power MOSFET in a I²PAKFP package Datasheet - production data Features 1 2 3 I 2PAKFP (TO-281) Order code VDSS @Tjmax STFI20NM65N 710 V RDS(on) max. 0.270 Ω ID 15 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic diagram '  *  Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.