Datasheet Summary
STI22NM60N
N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFET in I²PAK package
Features
TAB ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1)
- Ob S(3) t(s) AM01475v1_noZen_noTab
Order code
VDS @ Tjmax.
RDS(on)max.
STI22NM60N
650 V
0.22 Ω
16 A
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable...