2310DHI datasheet by STMicroelectronics.
| Part number | 2310DHI |
|---|---|
| Datasheet | 2310DHI_STMicroelectronics.pdf |
| File Size | 202.72 KB |
| Manufacturer | STMicroelectronics |
| Description | ST2310DHI |
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The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =32 Ω Typ. RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj April 2003 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0)...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2310 | N-Channel 60V MOSFET | VBsemi |
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2310-RC | High Current Toroid Inductors | Bourns |
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2310FX | ST2310FX | ST Microelectronics |
View all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| 2310HI | ST2310HI |
