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24NM60N - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • 3 2 1 TO-220FP 7$%    TO-220 123 I2PAK 3 2 1 TO-247 Order codes VDS @Tjmax STF24NM60N STI24NM60N STP24NM60N 650 V STW24NM60N RDS(on) max. 0.19 Ω ID 17 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance Figure 1. Internal schematic diagram ' RU7$% .
  •  6  $0Y.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet − production data TAB Features 3 2 1 TO-220FP 7$%    TO-220 123 I2PAK 3 2 1 TO-247 Order codes VDS @Tjmax STF24NM60N STI24NM60N STP24NM60N 650 V STW24NM60N RDS(on) max. 0.19 Ω ID 17 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram ' RU7$% *  6  $0Y Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.