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28C16B - M28C16B

General Description

The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology.

The devices offer fast access time, with low power dissipation, and require a single voltage supply.

Figure 1.

Key Features

  • n Address.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com M28C16B M28C17B 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s s Fast Access Time: 90 ns at VCC=5V Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W s s Low Power Consumption Fast BYTE and PAGE WRITE (up to 64 Bytes) – 3 ms at VCC=4.5 V – 5 ms at VCC=2.7 V s Enhanced Write Detection and Monitoring: – Data Polling – Toggle Bit – Page Load Timer Status PLCC32 (K) s s s s JEDEC Approved Bytewide Pin-Out Software Data Protection 100000 Erase/Write Cycles (minimum) Data Retention (minimum): 40 Years DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology.