28N60M2
Features
Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2
VDS @ TJmax 650 V
RDS(on) max. 0.150 Ω
ID 22 A
Figure 1: Internal schematic diagram
D (2 TAB )
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
- LCC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
G(1) developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
S(3)
AM15572V1
Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2
Table 1: Device summary
Marking
Package
D²PAK
I²PAK TO-220
TO-247
Packing Tape and reel
Tube
March 2017
Doc ID025254 Rev 4
This is information on a product in full production.
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Contents
Contents
STB28N60M2,...
