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28N65M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS RDS(on) max 650 V 0.18 Ω ID 20 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - preliminary data TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram , TAB Features Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS RDS(on) max 650 V 0.18 Ω ID 20 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.