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28NM50N - N-Channel Power MOSFET

Datasheet Summary

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes STB28NM50N STF28NM50N STP28NM50N STW28NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.158 Ω ID 21 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet preview – 28NM50N

Datasheet Details

Part number 28NM50N
Manufacturer STMicroelectronics
File Size 924.95 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 28NM50N Datasheet
Additional preview pages of the 28NM50N datasheet.

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Full PDF Text Transcription

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STB28NM50N, STF28NM50N STP28NM50N, STW28NM50N N-channel 500 V, 0.135 Ω, 21 A D²PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET Features Order codes STB28NM50N STF28NM50N STP28NM50N STW28NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.158 Ω ID 21 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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