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2N2905AHR - Hi-Rel PNP bipolar transistor

General Description

The 2N2905AHR is a silicon planar epitaxial PNP transistor in a TO-39 package.

It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5202-002 specification.

Key Features

  • BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 60 V 0.6 A > 100 -65°C to +200°C.
  • Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram TO-39.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 60 V 0.6 A > 100 -65°C to +200°C ■ ■ ■ ■ ■ Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram TO-39 Description The 2N2905AHR is a silicon planar epitaxial PNP transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5202-002 specification. In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails. www.DataSheet.net/ Table 1.