Datasheet4U Logo Datasheet4U.com

2N3810HR - Hi-Rel PNP dual matched bipolar transistors

General Description

The 2N3810K and SOC3810HR are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

Key Features

  • Vceo 60 V IC(max. ) 0.05 A HFE at 10 V, 150 mA > 125 Tj(max. ) 200 °C.
  • Hermetic packages.
  • ESCC qualified.
  • 100 krad.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N3810 PNP Transistor Semicoa Semiconductor
2N3810 PNP SILICON DUAL TRANSISTOR Microsemi Corporation
2N3810 (2N3806 - 2N3811) Dual AMplifier Transistors Motorola
2N3810 PNP Silicon Dual Amplifier Transistor NES
2N3810 SILICON DUAL PNP TRANSISTORS Central Semiconductor

Other Datasheets by STMicroelectronics

Part Number Description
2N3019 SMALL SIGNAL NPN TRANSISTOR
2N3019HR Hi-Rel NPN bipolar transistor
2N3055 COMPLEMENTARY SILICON POWER TRANSISTORS
2N3114 NPN Transistor
2N3209 Silicon Planar PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
8 5 1 4 Flat-8 6 5 4 1 2 3 LCC-6 1 C1 2 B1 3 E1 C2 8 B2 7 E2 6 4 5 Flat-8 Pin 4 and pin 5 are connected together to the seal ring and lid 4 E1 6 B1 E2 3 B2 1 5 C1 AM03130REV1 LCC-6 C2 2 The upper metallic shield is not internally connected neither to any pin nor to the die inside Product status link 2N3810HR 2N3810HR Datasheet Rad-Hard 60 V, 0.05 A PNP dual matched transistor Features Vceo 60 V IC(max.) 0.05 A HFE at 10 V, 150 mA > 125 Tj(max.) 200 °C • Hermetic packages • ESCC qualified • 100 krad Description The 2N3810K and SOC3810HR are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).