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2N3810HR Datasheet PDF

STMicroelectronics 2N3810HR

The 2N3810K and SOC3810HR are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Part No. 2N3810HR
Datasheet 2N3810HR Download
Manufacturer
STMicroelectronics
Description Rad-Hard 60V 0.05A PNP dual matched transistor
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2N3810HR datasheet page 1 preview

FEATURES

Vceo 60 V IC(max.) 0.05 A HFE at 10 V, 150 mA > 125 Tj(max.) 200 °C
● Hermetic packages
● ESCC qualified
● 100 krad

DESCRIPTION

Qualified as per ESCC 5207/005 specification and available in Flat-8 and LCC-6 hermetic packages, they are specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Device 2N3810Kx 2N3810RKx SOC3810HRx SOC3810RHRx Product summary Qualification system Agency specification ESCC Flight 5207/005 ESCC Flight 5207/005 ESCC Flight 5207/005 ESCC Flight 5207/005 Note: See Table 7 for ordering information. Package Flat-8 Flat-8 LCC-6 LCC-6 Radiation level - 100 krad - 100 krad DS6098 - Rev 11 - April 2024 For further information contact your local STMicroelectronics sales office. 2N3810HR Electrical ratings 1 Electrical ratings Table 1.
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