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2N3810HR - Hi-Rel PNP dual matched bipolar transistors

Datasheet Summary

Description

The 2N3810K and SOC3810HR are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

Features

  • Vceo 60 V IC(max. ) 0.05 A HFE at 10 V, 150 mA > 125 Tj(max. ) 200 °C.
  • Hermetic packages.
  • ESCC qualified.
  • 100 krad.

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Datasheet Details

Part number 2N3810HR
Manufacturer STMicroelectronics
File Size 786.63 KB
Description Hi-Rel PNP dual matched bipolar transistors
Datasheet download datasheet 2N3810HR Datasheet
Additional preview pages of the 2N3810HR datasheet.

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Full PDF Text Transcription

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8 5 1 4 Flat-8 6 5 4 1 2 3 LCC-6 1 C1 2 B1 3 E1 C2 8 B2 7 E2 6 4 5 Flat-8 Pin 4 and pin 5 are connected together to the seal ring and lid 4 E1 6 B1 E2 3 B2 1 5 C1 AM03130REV1 LCC-6 C2 2 The upper metallic shield is not internally connected neither to any pin nor to the die inside Product status link 2N3810HR 2N3810HR Datasheet Rad-Hard 60 V, 0.05 A PNP dual matched transistor Features Vceo 60 V IC(max.) 0.05 A HFE at 10 V, 150 mA > 125 Tj(max.) 200 °C • Hermetic packages • ESCC qualified • 100 krad Description The 2N3810K and SOC3810HR are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
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