STMicroelectronics 2N4014
The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A.| Part No. | 2N4014 |
|---|---|
| Datasheet | 2N4014 Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon Planar Epitaxial transistor |
| Buy | Stock & Price |
DESCRIPTION
Fast switching times are assured because of the high minimum fT (300 MHz) and tight control on storage time. TO-18 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CES V CEO V EBO IC Pt o t T s t g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature Value 80 80 50 6 1 0.36 1.2 – 65 to 200 Unit V V V V A W W °C 1/6 2N4014 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 °C/W °C/W ELECTRICAL CHARACTERISITCS(T a mb = 25 °C unless otherwise specified) Symbol I CBO V( BR)CB O Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-Emitter Breakdown Voltage (I B = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Test Conditions V CB = 60 V V CB = 60 V I C = 10 µA T amb = 100 °C 80 Min.
