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2N5153HR - 5A PNP Transistor

General Description

The 2N5153HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure.

It provides high reliability performance and immunity to the total ionizing dose (TID).

Key Features

  • VCEO IC(max. ) 80 V 5A.
  • Hermetic package.
  • ESCC qualified.
  • Up to 100 krad(Si) low dose rate hFE at 5 V, 2.5 A > 70 Operating temperature range -65 °C to +200 °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5153HR Datasheet Rad-Hard 80 V, 5 A PNP bipolar transistor 2 31 2 TO-257 1 3 SMD.5 Base and Emitter are inverted for 2N5153RSRHRx and 2N5153SRHRx series AM3128V1_n Product status link 2N5153HR Features VCEO IC(max.) 80 V 5A • Hermetic package • ESCC qualified • Up to 100 krad(Si) low dose rate hFE at 5 V, 2.5 A > 70 Operating temperature range -65 °C to +200 °C Description The 2N5153HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID). Qualified as per ESCC 5204/002 specification and available in SMD.