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2N5884 Datasheet Complementary Silicon High Power Transistors

Manufacturer: STMicroelectronics

Overview: 2N5884 2N5886 PLEMENTARY SILICON HIGH POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES PLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND.

General Description

The 2N5884 and 2N5886 are plementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications.

INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max.

Operating Junction Temperature Value 2N5884 2N5886 80 80 5 25 50 7.5 200 -65 to 200 200 V V V A A A W o o Unit C C For PNP types voltage and current values are negative.

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