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2NK100Z - N-channel Power MOSFET

Datasheet Summary

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.

Features

  • Order code VDS STD2NK100Z 1000 V.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected RDS(on) max. 8.5 Ω ID 1.85 A.

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Datasheet Details

Part number 2NK100Z
Manufacturer STMicroelectronics
File Size 753.46 KB
Description N-channel Power MOSFET
Datasheet download datasheet 2NK100Z Datasheet
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STD2NK100Z Datasheet N-channel 1000 V, 6.25 Ω typ., 1.85 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS STD2NK100Z 1000 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 8.5 Ω ID 1.85 A Applications • Switching applications Description AM01476v1_tab This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
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