2STC5949 - High power NPN epitaxial planar bipolar transistor

Product Overview

STMicroelectronics

Part number	2STC5949
Manufacturer	STMicroelectronics
File Size	177.67 KB
Description	High power NPN epitaxial planar bipolar transistor
Datasheet	2STC5949 Datasheet
Additional preview pages of the 2STC5949 datasheet.

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC.

📁 Similar Datasheet

2ST1480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
2ST2480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
2ST31A - NPN Transistor (INCHANGE)
2ST501T - NPN Transistor (INCHANGE)
2STA1695 - High power PNP epitaxial planar bipolar transistor (ST Microelectronics)
2STA1962 - High power PNP epitaxial planar bipolar transistor (ST Microelectronics)
2STBN15D100 - NPN Transistor (ST Microelectronics)
2STD1665 - Low voltage fast-switching NPN power transistor (ST Microelectronics)

Other Datasheets by STMicroelectronics

Published: May 31, 2009 |