Datasheet Summary
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Low voltage fast-switching NPN power bipolar transistor
Preliminary Data
General Features
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Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-89 plastic package for surface mounting circuits In pliance with the 2002/93/EC European Directive
SOT-89
- Description
The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The plementary PNP is the 2STF2340.
Internal schematic diagram
Applications
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- LED Motherboard &...