2STF1340 Description
The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The plementary PNP is the 2STF2340.
2STF1340 Key Features
- Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-89 pla
- Description