STMicroelectronics 2STW1693
The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour.| Part No. | 2STW1693 |
|---|---|
| Datasheet | 2STW1693 Download |
| Manufacturer |  STMicroelectronics |
| Description | High power PNP epitaxial planar bipolar transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage VCEO = -80 V● Complementary to 2STW4466
● Typical ft = 20 MHz
● Fully characterized at 125 oC
APPLICATIONS
● Audio power amplifierDESCRIPTION
Recommended for 40W to 70W high fidelity audio frequency amplifier output stage. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code 2STW1693 Marking 2STW1693 Package TO-247 Packaging Tube October 2008 Rev 2 1/9 9 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter VCBO VCEO VEBO IC ICM PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissip
