315N10F7 Datasheet | STMicroelectronics

STP315N10F7 Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package - production data Features Order code STP315N10F7 VDS 100 V RDS(on)max 2.7 mΩ ID 180 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) Features - Designed for automotive applications and AEC-Q101 qualified - Among the lowest RDS(on) on the market - Excellent FoM (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also...