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STP315N10F7
Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code STP315N10F7
VDS 100 V
RDS(on)max 2.7 mΩ
ID 180 A
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Features
Designed for automotive applications and AEC-Q101 qualified
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
315N10F7 Datasheet
