32N65DM6 Datasheet | STMicroelectronics

Features Order code RDS(on) max. STHU32N65DM6AG 650 V 97 mΩ 37 A 1 HU3PAK Drain(TAB) - AEC-Q101 qualified - Fast-recovery body diode - Lower RDS(on) x area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely dv/dt ruggedness - Zener-protected - Excellent switching performance thanks to the extra driving source pin Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-ch G1DS2PS34567DTABZ Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STHU32N65DM6AG Product summary Order code STHU32N65DM6AG Marking Package HU3PAK Packing Tape and reel DS13782 - Rev 3 - November 2021 For further information contact your local STMicroelectronics sales...