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STHU32N65DM6AG
Datasheet
Automotive-grade N-channel 650 V, 83 mΩ typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package
Features
Order code
VDS
RDS(on) max.
ID
TAB
STHU32N65DM6AG
650 V
97 mΩ
37 A
7
1 HU3PAK
Drain(TAB)
• AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) x area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin
Gate(1) Driver
source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTABZ
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.