33N60DM6
Features
Order code
RDS(on) max.
STF33N60DM6
600 V
128 mΩ
25 A
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Product status link STF33N60DM6
Product summary
Order code
STF33N60DM6
Marking
Package
TO-220FP
Packing
Tube
DS12937
- Rev 2
- July 2020 For further information contact your local STMicroelectronics sales office.
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STF33N60DM6...
