34NM60N Datasheet | STMicroelectronics

STW34NM60N N-channel 600 V, 0.092 Ω typ., 31.5 A MDmesh™ II Power MOSFETs in a TO-247 package - production data Features 72 Order code VDSS STW34NM60N 600 V RDS(on) 0.105 Ω PTOT 31.5 A 250 W - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications Figure 1. Internal schematic diagram '7$% - Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore...