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34NM60N - N-Channel MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  •    72 Order code VDSS STW34NM60N 600 V RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW34NM60N N-channel 600 V, 0.092 Ω typ., 31.5 A MDmesh™ II Power MOSFETs in a TO-247 package Datasheet - production data Features    72 Order code VDSS STW34NM60N 600 V RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% *  Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.