36DN6F7 Description
This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL36DN6F7 Marking 36DN6F7 Table 1: Device summary Package PowerFLAT™ 5x6 double island Packing Tape and reel May 2017 DocID028259 Rev 3 This is information on...
36DN6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness