36DN6F7 Datasheet | STMicroelectronics

res Order code STL36DN6F7 VDS 60 V RDS(on) max 27 mΩ ID 33 A - Among the lowest RDS(on) on the market - Excellent figure of merit (Fo M) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This dual N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL36DN6F7 Marking 36DN6F7 Table 1: Device summary Package Power FLAT™ 5x6 double island Packing Tape and reel May 2017 Doc ID028259 Rev 3 This is information on a product in full production. 1/15 .st. Contents Contents STL36DN6F7 1 Electrical ratings...