36N60DM6
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Prerelease product(s)
DS11713
- Rev 3
- September 2018 For further information contact your local STMicroelectronics sales office.
.st.
STH36N60DM6-7AG
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
ID (1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C dv/dt(2)
Peak diode recovery voltage slope dv/dt(3)
MOSFET dv/dt ruggedness
Operating junction temperature...
