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38N65M5 - N-CHANNEL Power MOSFET

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Order codes VDS @ TJmax RDS(on) max ID STB38N65M5 STP38N65M5 STW38N65M5 710 V 0.095 Ω 30 A.
  • Higher VDSS rating and high dv/dt capability.
  • Excellent switching performance.
  • 100% avalanche tested.

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STB38N65M5, STP38N65M5, STW38N65M5 N-channel 650 V, 0.073 Ω typ., 30 A MDmesh™ V Power MOSFETs 2 in D PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Order codes VDS @ TJmax RDS(on) max ID STB38N65M5 STP38N65M5 STW38N65M5 710 V 0.095 Ω 30 A • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100% avalanche tested Applications • Switching applications ' Ć7$% Description *  6  $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.