STMicroelectronics 3N40K3
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.FEATURES
4 3 2 1 SOT-223 Figure 1. Internal schematic diagram ' * 6 AM01476v1 Order code STN3N40K3 VDS 400V RDS(on) max 3.4 Ω ID PTOT 1.8 A 3.3W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected Application
● Switching applications
DESCRIPTION
Order code STN3N40K3 Table 1. Device summary Marking Package 3N40K3 SOT-223 Packaging Tape and reel June 2014 This is information on a product in full production. DocID17697 Rev 3 1/14 Contents Contents STN3N40K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .