3N45K3
Features
4 3
2 1
SOT-223
Figure 1. Internal schematic diagram
'
-
6
AM01476v1
Order code STN3N45K3
VDSS 450 V
RDS(on) max
<4Ω
ID Pw 0.6 A 3 W
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
- Switching applications
Description
This Super MESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ Super MESH™ technology, bined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Order code STN3N45K3
Table 1. Device summary
Marking
Package
SOT-223
Packaging Tape and reel
June 2013
This is information on a product in full production.
Doc ID024888 Rev 1
1/15
.st.
Contents
Contents
STN3N45K3
1 Electrical ratings
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