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3N65M - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code VDS RDS(on ) max. STL3N65M2 650 V 1.8 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected ID 2.3 A.

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Datasheet preview – 3N65M

Datasheet Details

Part number 3N65M
Manufacturer STMicroelectronics
File Size 314.05 KB
Description N-channel Power MOSFET
Datasheet download datasheet 3N65M Datasheet
Additional preview pages of the 3N65M datasheet.

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Full PDF Text Transcription

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STL3N65M2 Datasheet N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package 123 4 876 5 567 8 PowerFLAT 3.3x3.3 HV D(5, 6, 7, 8) G(4) Features Order code VDS RDS(on ) max. STL3N65M2 650 V 1.8 Ω • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected ID 2.3 A Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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