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3N65M - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

S(1, 2, 3) NG4D5678S123Z Product status link STL3N65M2 Product summary Order code STL3N65M2 Marking 3N65M Package PowerFLAT 3.3x3.3 HV Packing Tape and reel DS11065 - Rev 4 - May 2022 For further information contact your local STMicroelectronics sales office.

Overview

STL3N65M2 Datasheet N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package 123 4 876 5 567 8 PowerFLAT 3.3x3.

Key Features

  • Order code VDS RDS(on ) max. STL3N65M2 650 V 1.8 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected ID 2.3 A.