3NF06L
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC-DC & DC-AC COVERTERS s DC MOTOR CONTROL (DISK DRIVERS, etc.) s SYNCHRONOUS RECTIFICATION SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(- ) ID IDM(-
- ) Ptot dv/dt
(1)
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature
Value 60 60 ± 16 4 2.9 16 3.3 0.026 10 200 -55 to 150
(1) ISD ≤ 3A, di/dt ≤...
