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3NF06L Datasheet PDF

STMicroelectronics 3NF06L

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Part No. 3NF06L
Datasheet 3NF06L Download
Manufacturer
STMicroelectronics
Description N-Channel MOSFET
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3NF06L datasheet page 1 preview

DESCRIPTION

APPLICATIONS

s DC-DC & DC-AC COVERTERS s DC MOTOR CONTROL (DISK DRIVERS, etc.) s SYNCHRONOUS RECTIFICATION SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID(●) ID IDM(●●) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 ± 16 4 2.9 16 3.3 0.026 10 200 -55 to 150 (1) ISD ≤ 3A, di/dt ≤ 150A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (2) Starting T j = 25 oC, ID = 4A, VDD = 30V Unit V V V A A A W W/°C V/ns mJ °C EAS (2) Tstg Tj (●●) Pulse width limited by safe operating area. (●) Current limited by the package December 2002 . 1/8 STN3NF06L THERMAL DATA Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-PCB (*) Thermal Resistance Junction-PCB (**) Maximum Lead Temperature For Soldering Purpose (for 10 sec.
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