STMicroelectronics 3NM60N
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | 3NM60N |
|---|---|
| Datasheet | 3NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STL3NM60N RDS(on) max. 1.8 Ω ID 2.2 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance Application
● Switching applications Figure 1. Internal schematic diagram 4G 3 2 1S 5 6 D 7 8
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Bottom View Order code STL3NM60N Table 1. Device summary Marking Package 3NM60N PowerFLAT™ 3.3 x 3.3 HV Packaging Tape and reel November 2014 This is information on a product in full production. DocID022795 Rev 2 1/13 Contents Contents STL3NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
