3NM60N
Features
Order code STL3NM60N
RDS(on) max. 1.8 Ω
ID 2.2 A
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Application
- Switching applications
Figure 1. Internal schematic diagram
4G 3 2 1S
6 D
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Bottom View
Order code STL3NM60N
Table 1. Device summary
Marking
Package
Power FLAT™ 3.3 x 3.3 HV
Packaging Tape and reel
November 2014
This is information on a product in full production.
Doc ID022795 Rev 2
1/13
.st.
Contents
Contents
STL3NM60N
1 Electrical ratings
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