3P6F6
Features
Order code STN3P6F6
VDS -60 V
RDS(on) max. 0.16 Ω
ID -3 A
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
Description
This device is a P-channel Power MOSFET developed using the STrip FET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(3)
Int_schem_P_ch_n Tn Z_SOT_223
Order code STN3P6F6
Table 1: Device summary
Marking
Package
SOT-223
Packing Tape and reel
October 2016
Doc ID023758 Rev 5
This is information on a product in full production.
1/13
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Contents
Contents
STN3P6F6
1 Electrical ratings 3
2 Electrical characteristics 4
2.1 Electrical characteristics (curves) 6
3 Test circuits...
