STMicroelectronics 3STL2540
This device is an PNP transistor manufactured using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.FEATURES
● Very low collector-emitter saturation voltage● High current gain characteristic
● Small, thin, leadless SMD plastic package with excellent thermal behavior
APPLICATIONS
● Power management● DC-DC converters
DESCRIPTION
Datasheet — production data 3 1 2 2 1 PowerFLAT™ 2 x 2 3L Figure 1. Internal schematic diagram Table 1. Device summary Order code 3STL2540 Marking L2540 Package PowerFLAT™ 2 x 2 May 2012 This is information on a product in full production. Doc ID 022059 Rev 2 Packaging Tape and reel 1/11 11 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Symbol Absolute maximum ratings Parameter VCBO Collector-base voltage (IE = 0) VCEO Collector-emitter voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) IC Collector current ICM Collector peak current (tP < 5 ms) IB Base current IBM Base peak current (tP < 5 ms) PTOT(1) Total dissipation at TA = 25 °C TSTG Storage temperature TJ Max. operating junction temperature 1. Device mounted on a PCB area of 1 cm² Table 3.