STMicroelectronics 3STR1630
This device is an NPN transistor manufactured t(s) using low voltage planar technology with a Obsolete Produc double-metal process.| Part No. | 3STR1630 |
|---|---|
| Datasheet | 3STR1630 Download |
| Manufacturer |  STMicroelectronics |
| Description | Low voltage high performance NPN power transistor |
| Buy | Stock & Price |
FEATURES
● Very low collector-emitter saturation voltage● High current gain characteristic 3
● Fast switching speed t(s)
● Miniature SOT-23 plastic package ECOPACK®2 grade for surface mounting c circuits rodu
APPLICATIONS
P● Strobe and LED drives te
● Motor and relay drives ole
● DC-DC converters bs
DESCRIPTION
- O 2 1 SOT-23 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking 3STR1630 1630 June 2011 Package SOT-23 Doc ID 16600 Rev 3 Packing Tape and reel 1/10 10 Electrical ratings 1 Electrical ratings 3STR1630 Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 30 V VCEO Collector-emitter voltage (IB = 0) 30 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 6 A ICM t(s) PTOT c TSTG du TJ Collector peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature te Pro Table 3. Thermal data le Symbol Parameter so RthJA(1) Thermal resistance junction-ambient max Obsolete Product(s) - Ob 1.
