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52N60DM6 - N-channel Power MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Key Features

  • Order code VDS RDS(on) max. ID STO52N60DM6 600 V 78 mΩ 45 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.
  • High-creepage package.
  • Excellent switching performance thanks to the extra driving source pin.

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Full PDF Text Transcription (Reference)

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STO52N60DM6 Datasheet N‑channel 600 V, 68 mΩ typ., 45 A, MDmesh DM6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7,8) N-chG1DS2PS345678DTABZ Features Order code VDS RDS(on) max. ID STO52N60DM6 600 V 78 mΩ 45 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • High-creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.