55NM60ND - STW55NM60ND

Datasheet Summary

Description

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology.

Features

Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A.
The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance.
High dv/dt and avalanche capabilities.

STMicroelectronics

📥 Download Datasheet

Datasheet Details

Part number	55NM60ND
Manufacturer	STMicroelectronics
File Size	197.95 KB
Description	STW55NM60ND
Datasheet	55NM60ND Datasheet
Additional preview pages of the 55NM60ND datasheet.

📁 Similar Datasheet

55N03L - N-Channel FET (ETC)
55N03LT - PHB55N03LT (NXP)
55N03LTA - Logic Level FET (Philips)
55N10 - N-Channel MOSFET Transistor (Inchange Semiconductor)
55N10 - FQA55N10 (Fairchild Semiconductor)
55N12B - MCF (Nihon)
55N17B - MCF (Nihon)
55N20E - MTY55N20E (Motorola)
55N50F - IXFN55N50F (IXYS Corporation)
55N9BD - MCF (Nihon)

Other Datasheets by STMicroelectronics

55N06L - STP55N06L
55NF03L - N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text

STW55NM60ND N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package Datasheet — production data Features Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A ■ The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ High dv/dt and avalanche capabilities Application ■ Switching applications Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance.

Published: Sep 4, 2015 |