• Part: 55NM60ND
  • Description: STW55NM60ND
  • Manufacturer: STMicroelectronics
  • Size: 197.95 KB
Download 55NM60ND Datasheet PDF
STMicroelectronics
55NM60ND
55NM60ND is STW55NM60ND manufactured by STMicroelectronics.
STW55NM60ND N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package - production data Features Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A - The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance - High dv/dt and avalanche capabilities Application - Switching applications Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device Features extremely low onresistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STW55NM60ND Package TO-247 Packaging Tube December 2012 This is information on a product in full production. Doc ID 14169 Rev...