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5N20V - N-channel Power MOSFET

General Description

) le strip-based process.

Key Features

  • Type VDSS RDS(on) ID < 0.040 Ω (@ 4.5 V) ) STC5NF20V 20V < 0.045 Ω (@ 2.7 V) 5A t(s.
  • Ultra low threshold gate drive (2.7V) uc.
  • Standard outline for easy automated surface d mount assembly Pro t(s).

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STC5NF20V N-channel 20V - 0.030Ω - 5A - TSSOP8 2.7V-drive STripFET™ II Power MOSFET Features Type VDSS RDS(on) ID < 0.040 Ω (@ 4.5 V) ) STC5NF20V 20V < 0.045 Ω (@ 2.7 V) 5A t(s ■ Ultra low threshold gate drive (2.7V) uc ■ Standard outline for easy automated surface d mount assembly Pro t(s) Application lete uc ■ Switching applications so rod Description - Ob te P This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" ) le strip-based process. The resulting transistor t(s so shows extremely high packing density for low onc b resistance, rugged avalanche characteristics and u O less critical alignment steps therefore a d - remarkable manufacturing reproducibility. TSSOP8 Figure 1. Internal schematic diagram bsolete PPrrooduct(s) Table 1.