62NM60N - N-Channel MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

N-channel 600 V, 0.04 Ω typ. , 65 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet.
production data Order code STW62NM60N VDS 600 V RDS(on) max 0.049 Ω ID 65 A.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance.

STMicroelectronics

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Datasheet Details

Part number	62NM60N
Manufacturer	STMicroelectronics
File Size	787.86 KB
Description	N-Channel MOSFET
Datasheet	62NM60N Datasheet
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STW62NM60N Features N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet − production data Order code STW62NM60N VDS 600 V RDS(on) max 0.049 Ω ID 65 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 Figure 1. Internal schematic diagram $ ' Table 1.

Published: Dec 9, 2020 |