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66DN3LH5 - Dual N-channel Power MOSFET

Datasheet Summary

Description

This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology.

The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.

Features

  • Order code VDS RDS(on) max. ID PTOT STL66DN3LLH5 30 V 6.5 mΩ 20 A 4.7 W.
  • Designed for automotive.

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Datasheet Details

Part number 66DN3LH5
Manufacturer STMicroelectronics
File Size 808.82 KB
Description Dual N-channel Power MOSFET
Datasheet download datasheet 66DN3LH5 Datasheet
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    STL66DN3LLH5 Automotive-grade dual N-channel 30 V, 5.9 mΩ typ., 20 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL66DN3LLH5 30 V 6.5 mΩ 20 A 4.7 W  Designed for automotive applications and AEC-Q101 qualified  Logic level VGS(th)  175 °C maximum junction temperature  Wettable flanks package Applications  Switching applications Description This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
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