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72N60DM2 - N-CHANNEL MOSFET

General Description

series.

Key Features

  • Order code STW72N60DM2AG VDS 600 V RDS(on) max. 0.042 Ω ID 66 A PTOT 446 W 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2, TAB).
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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STW72N60DM2AG Automotive-grade N-channel 600 V, 0.037 Ω typ., 66 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code STW72N60DM2AG VDS 600 V RDS(on) max. 0.042 Ω ID 66 A PTOT 446 W 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2, TAB)  AEC-Q101 qualified  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is G(1) part of the MDmesh™ DM2 fast recovery diode series.