74V1G03 - SINGLE 2-INPUT OPEN DRAIN NAND GATE

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Description

lete ucSINGLE 2-INPUT OPEN DRAIN NAND GATE dfabricated with sub-micron silicon gate and so rodouble-layer metal wiring C2MOS technology.

STMicroelectronics

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Datasheet Details

Part number	74V1G03
Manufacturer	STMicroelectronics
File Size	133.92 KB
Description	SINGLE 2-INPUT OPEN DRAIN NAND GATE
Datasheet	74V1G03 Datasheet
Additional preview pages of the 74V1G03 datasheet.

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74V1G03 SINGLE 2-INPUT OPEN DRAIN NAND GATE s HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) )s POWER DOWN PROTECTION ON INPUTS t(ss OPERATING VOLTAGE RANGE: cVCC(OPR) = 2V to 5.5V us IMPROVED LATCH-UP IMMUNITY Prod t(s)DESCRIPTION The 74V1G03 is an advanced high-speed CMOS lete ucSINGLE 2-INPUT OPEN DRAIN NAND GATE dfabricated with sub-micron silicon gate and so rodouble-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages b Pincluding buffer output, which provide high noise - O teimmunity and stable output. ) leThe device can, with an external pull-up resistor, t(s obe used in wired AND configuration.

Published: Mar 22, 2005 |