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74V2G66 - DUAL BILATERAL SWITCH

General Description

The 74V2G66 is an high-speed CMOS DUAL BILATERAL SWITCH fabricated in silicon gate C2MOS technology.

It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption.

This feature makes this part ideal for battery-powered equipment.

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Other Datasheets by STMicroelectronics

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74V2G00 DUAL 2-INPUT NAND GATE
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® 74V2G66 DUAL BILATERAL SWITCH PRELIMINARY DATA s s s s s HIGH SPEED: tPD = 0.3 ns (TYP.) at VCC = 5V tPD = 0.4 ns (TYP.) at VCC = 3.3V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC LOW ”ON” RESISTANCE: RON = 10Ω (TYP.)AT VCC = 5.0V II/O=100µA RON = 12Ω (TYP.)AT VCC = 3.3V II/O=100µA SINE WAVE DISTORTION 0.04% (TYP.) AT VCC=3.3V f=1KHz WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5V SOT23-8L ORDER CODES PACKAGE SOT23-8L T UBE T& R 74V2G66STR DESCRIPTION The 74V2G66 is an high-speed CMOS DUAL BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This feature makes this part ideal for battery-powered equipment.